Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Inductor Power Shielded Wirewound 6.8uH 20% 100KHz Ferrite 4.2A 0.025Ohm DCR T/R
Inductor Power Shielded Wirewound 1uH 20% 100KHz Ferrite 8.71A 0.01Ohm DCR T/R
Inductor Power Shielded Wirewound 22uH 20% 1KHz Ferrite 1.6A 0.099Ohm DCR T/R
Inductor Power Shielded Wirewound 10uH 20% 1KHz Ferrite 2.5A 0.047Ohm DCR T/R

Inductor Power Shielded Wirewound 3300uH 20% 1KHz Ferrite 0.16A 10Ohm DCR T/R
Inductor Power Shielded Wirewound 47uH 20% 1KHz Ferrite 1.15A 0.195Ohm DCR T/R

Inductor Power Shielded Wirewound 8200uH 20% 1KHz Ferrite 0.096A 28.4Ohm DCR T/R

Inductor Power Shielded Wirewound 5600uH 20% 1KHz Ferrite 0.11A 17.1Ohm DCR T/R

Inductor Power Shielded Wirewound 820uH 20% 1KHz Ferrite 0.33A 2.61Ohm DCR T/R

Inductor Power Shielded Wirewound 10uH 20% 1KHz Ferrite 3.6A 0.036Ohm DCR T/R
Inductor Power Shielded Wirewound 6.8uH 20% 100KHz Ferrite 2.9A 0.036Ohm DCR T/R
Inductor Power Shielded Wirewound 68uH 20% 1KHz Ferrite 0.92A 0.286Ohm DCR T/R

Inductor Power Shielded Wirewound 100uH 20% 1KHz Ferrite 0.94A 0.36Ohm DCR T/R

Inductor Power Shielded Wirewound 8.2uH 20% 100KHz Ferrite 3.7A 0.031Ohm DCR T/R