NPN silicon bipolar junction transistor designed for small signal applications. Features a continuous collector current of 1A and a collector-emitter breakdown voltage of 80V. This hermetically sealed, single-element device utilizes a CERSOT-3 package with 3 terminals, offering a maximum operating temperature of 200°C.
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Technical Specifications
Semicoa 2N3700UB technical specifications.
General
Max Operating Temperature
200
Number of Terminals
3
Terminal Position
DUAL
Pin Count
3
Number of Elements
1
Compliance
RoHS
No
Eccn Code
EAR99
HTS Code
8541.21.00.95
REACH
unknown
Military Spec
False
Datasheet
Semicoa 2N3700UB Datasheet
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