The JAN2N2857 is a TO-72 packaged NPN transistor with a collector base voltage of 30V, collector emitter voltage of 15V, and emitter base voltage of 3V. It has a maximum operating temperature range of -65°C to 200°C and a power dissipation of 200mW. The transistor is mounted through a hole and is not radiation hardened. It is not RoHS compliant.
PackageTO-72
MountingThrough Hole
PolarityNPN
Power200mW
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Technical Specifications
Semicoa JAN2N2857 technical specifications.
General
| Package/Case | TO-72 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Voltage (VCEO) | 15V |
| Emitter Base Voltage (VEBO) | 3V |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Polarity | NPN |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| RoHS Compliant | No |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Semicoa JAN2N2857 Datasheet
Download the complete datasheet for Semicoa JAN2N2857 to view detailed technical specifications.
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