SEMIX202GB12VS

IGBT, MODULE, 1.2KV, 310A; Transistor Polarity:Dual NPN; DC Collector Current:310A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:16; Packaging:Each ;RoHS Compliant: Yes

PackageModule

MountingScrew

PolarityNPN

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Semikron SEMIX202GB12VS technical specifications.

Package/Case

Module

Collector Emitter Voltage (VCEO)

1.2kV

Element Configuration

Dual

Max Operating Temperature

175°C

Min Operating Temperature

-40°C

Mount

Screw

Polarity

NPN

RoHS Compliant

Yes

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.