Semikron
SEMIX703GAL126HDS
IGBT MODULE, NPN, 1.2KV, 642A; Transistor Polarity:NPN; DC Collector Current:642A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:- ;RoHS Compliant: Yes
PackageModule
MountingScrew
PolarityNPN
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Technical Specifications
Semikron SEMIX703GAL126HDS technical specifications.
General
Package/Case
Module
Collector Emitter Voltage (VCEO)
1.2kV
Element Configuration
Single
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Mount
Screw
Polarity
NPN
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Semikron SEMIX703GAL126HDS Datasheet
Download the complete datasheet for Semikron SEMIX703GAL126HDS to view detailed technical specifications.
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