Semikron
SKIIP25NEB066V1
IGBT MODULE, SIX, 600V, 39A; Transistor Polarity:Six NPN; DC Collector Current:39A; Collector Emitter Saturation Voltage Vce(on):1.45V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:600V; No. of Pins:- ;RoHS Compliant: Yes
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Technical Specifications
Semikron SKIIP25NEB066V1 technical specifications.
General
Package/Case
Module
Collector Emitter Voltage (VCEO)
600V
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Semikron SKIIP25NEB066V1 Datasheet
Download the complete datasheet for Semikron SKIIP25NEB066V1 to view detailed technical specifications.
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