Semikron
SKM50GB123D
SEMIKRON SKM50GB123D IGBT Array & Module Transistor, N Channel, 50 A, 2.8 V, 400 W, 1.2 kV, SEMITRANS 2
PackageModule
Power310W
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Technical Specifications
Semikron SKM50GB123D technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2.8V
Max Operating Temperature
150°C
Max Power Dissipation
400W
Power Dissipation
310W
Reach SVHC Compliant
No
RoHS Compliant
No
Compliance
RoHS
Not Compliant
Datasheet
Semikron SKM50GB123D Datasheet
Download the complete datasheet for Semikron SKM50GB123D to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.