Semtech
1N6116US
Silicon Unidirectional Transient Voltage Suppressor Diode 24.3V 500mW 2-Pin HERMETIC SEALED
This silicon unidirectional transient voltage suppressor diode features a maximum reverse voltage of 20.6V and a minimum breakdown voltage of 24.3V. The diode is designed to handle a maximum non-repetitive peak reverse power dissipation of 500mW. The device is packaged in a hermetic sealed, surface mount package with 2 terminals. Operating temperature range is not specified. The diode is made from silicon and is a unidirectional device.
PolarityUNIDIRECTIONAL
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Technical Specifications
Semtech 1N6116US technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | END |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 20.6 |
| Breakdown Voltage-Min | 24.3 |
| Non-rep Peak Rev Power Dis-Max | 500 |
| Clamping Voltage-Max | 39.2 |
| Breakdown Voltage-Nom | 24.3 |
| Power Dissipation-Max | 1.5 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| Lead Free | No |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Semtech 1N6116US Datasheet
Download the complete datasheet for Semtech 1N6116US to view detailed technical specifications.
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