The JANTXV1N6112A is a silicon transient voltage suppressor diode with a maximum reverse voltage of 13.7V and a minimum breakdown voltage of 16.2V. It has a maximum non-repetitive peak reverse power dissipation of 500mW and a maximum clamping voltage of 25.1V. The diode is packaged in a hermetic sealed package with an axial terminal position. It operates within a temperature range of -55°C to 150°C and is suitable for use in high-reliability applications.
PolarityUNIDIRECTIONAL
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Technical Specifications
Semtech JANTXV1N6112A technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 13.7 |
| Breakdown Voltage-Min | 16.2 |
| Non-rep Peak Rev Power Dis-Max | 500 |
| Clamping Voltage-Max | 25.1 |
| Breakdown Voltage-Nom | 18 |
| Power Dissipation-Max | 1.5 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8504.40.95.70 |
| REACH | unknown |
| Military Spec | True |
Datasheet
Semtech JANTXV1N6112A Datasheet
Download the complete datasheet for Semtech JANTXV1N6112A to view detailed technical specifications.
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