This hermetically sealed, surface mount transient voltage suppressor diode features a silicon diode element with a maximum reverse voltage of 13.7V and a maximum non-repetitive peak reverse power dissipation of 500mW. The diode has a nominal breakdown voltage of 18V and a maximum clamping voltage of 26.5V. It is suitable for use in applications where a unidirectional current flow is required, with a maximum power dissipation of 1.5W.
PolarityUNIDIRECTIONAL
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Technical Specifications
Semtech JANTXV1N6112US technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | END |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 13.7 |
| Breakdown Voltage-Min | 16.2 |
| Non-rep Peak Rev Power Dis-Max | 500 |
| Clamping Voltage-Max | 26.5 |
| Breakdown Voltage-Nom | 18 |
| Power Dissipation-Max | 1.5 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | True |
Datasheet
Semtech JANTXV1N6112US Datasheet
Download the complete datasheet for Semtech JANTXV1N6112US to view detailed technical specifications.
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