This unidirectional silicon transient voltage suppressor diode features a breakdown voltage of 19.8V and a maximum non-repetitive peak reverse power dissipation of 500mW. The device is suitable for surface mount applications and has a maximum power dissipation of 1.5W. Operating temperature range is not specified, but the device is hermetically sealed in a surface mount package.
PolarityUNIDIRECTIONAL
Quick Jump:
Technical Specifications
Semtech JANTXV1N6114US technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | END |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 16.7 |
| Breakdown Voltage-Min | 19.8 |
| Non-rep Peak Rev Power Dis-Max | 500 |
| Clamping Voltage-Max | 31.9 |
| Breakdown Voltage-Nom | 22 |
| Power Dissipation-Max | 1.5 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | True |
Datasheet
Semtech JANTXV1N6114US Datasheet
Download the complete datasheet for Semtech JANTXV1N6114US to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.