Bidirectional transient voltage suppressor diode offering 300W peak pulse power and 12A peak pulse current. Features a 12V reverse standoff voltage, 13.3V breakdown voltage, and 24V clamping voltage. This silicon device provides ESD protection with a low leakage current of 1uA. Designed for surface mount applications in an 8-pin SOIC package, it supports 4 bidirectional channels and operates from -55°C to 125°C.
PackageSOIC
Voltage5V
Capacitance120pF
Voltage Rating12V
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Technical Specifications
Semtech SMDA12C.TBT technical specifications.
General
Capacitance
120pF
Package/Case
SOIC
Clamping Voltage
24V
Clamping Voltage-Max
24V
Depth
4mm
Diode Type
ZENER
Direction
Bidirectional
ESD Protection
Yes
Height
1.5mm
Lead Free
Lead Free
Leakage Current
1uA
Length
5mm
Max Breakdown Voltage
13.3V
Min Breakdown Voltage
13.3V
Max Operating Temperature
125°C
Min Operating Temperature
-55°C
Max Reverse Leakage Current
1uA
Mount
Surface Mount
Number of Bidirectional Channels
4
Number of Channels
4
Number of Elements
4
Operating Supply Voltage
12V
Packaging
Tape and Reel
Peak Pulse Current
12A
Peak Pulse Power
300W
Polarity
Bidirectional
Power Line Protection
No
Radiation Hardening
No
Reverse Breakdown Voltage
13.3V
Reverse Standoff Voltage
12V
RoHS Compliant
Yes
Series
SMDAC
Voltage
5V
Width
4mm
Working Voltage
12V
Compliance
RoHS
Compliant
Datasheet
Semtech SMDA12C.TBT Datasheet
Download the complete datasheet for Semtech SMDA12C.TBT to view detailed technical specifications.
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