This silicon bidirectional transient voltage suppressor diode features a breakdown voltage of 20V and a maximum non-repetitive peak reverse power dissipation of 500mW. It has a maximum clamping voltage of 29.1V and a maximum reverse voltage of 15.2V. The diode is constructed with a silicon element and has a terminal position of axial. It is suitable for use in a variety of applications requiring transient voltage suppression.
PolarityBIDIRECTIONAL
Quick Jump:
Technical Specifications
Sensitron JAN1N6113 technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 15.2 |
| Breakdown Voltage-Min | 18 |
| Non-rep Peak Rev Power Dis-Max | 500 |
| Clamping Voltage-Max | 29.1 |
| Breakdown Voltage-Nom | 20 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Sensitron JAN1N6113 Datasheet
Download the complete datasheet for Sensitron JAN1N6113 to view detailed technical specifications.
No datasheet is available for this part.