N-channel Power MOSFET with 600V drain-source voltage and 60A continuous drain current. Features a low 55mΩ drain-source on-resistance at 10V and a typical gate charge of 150nC. Encased in a TO-258 package with through-hole mounting, this single-element MOSFET offers a maximum power dissipation of 350W and operates across a temperature range of -55°C to 150°C.
PackageTO-258
MountingThrough Hole
Quick Jump:
Technical Specifications
Sensitron SHD224805 technical specifications.
General
| Package Family Name | TO-258 |
| Package/Case | TO-258 |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 17.65(Max) |
| Package Width (mm) | 6.86(Max) |
| Package Height (mm) | 13.97(Max) |
| Pin Pitch (mm) | 5.08 |
| Mounting | Through Hole |
| Jedec | TO-258AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 60A |
| Maximum Drain Source Resistance | 55@10VmOhm |
| Typical Gate Charge @ Vgs | 150@10VnC |
| Typical Gate Charge @ 10V | 150nC |
| Typical Input Capacitance @ Vds | 6800@100VpF |
| Maximum Power Dissipation | 350000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 13409 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Sensitron SHD224805 Datasheet
Download the complete datasheet for Sensitron SHD224805 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.