The GP2S24BJ000F is a phototransistor from Sharp with a collector-emitter breakdown voltage of 35V and a maximum collector current of 20mA. It is packaged in a PDIP package and is designed for through hole mounting. The device operates within a temperature range of -25°C to 85°C and is compliant with RoHS regulations. The phototransistor has a response time of 20us and a sensing distance of 0.7mm.
PackagePDIP
MountingThrough Hole
Power100mW
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Technical Specifications
Sharp GP2S24BJ000F technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Breakdown Voltage | 35V |
| Collector Emitter Voltage (VCEO) | 35V |
| Collector-emitter Voltage-Max | 35V |
| Fall Time | 20us |
| Forward Current | 20mA |
| Lead Free | Lead Free |
| Max Collector Current | 20mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -25°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Output Type | Phototransistor |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 100mW |
| Response Time | 20us |
| Reverse Breakdown Voltage | 6V |
| Reverse Voltage | 6V |
| RoHS Compliant | Yes |
| Sensing Distance | 0.7mm |
| Wavelength | 950nm |
Compliance
| RoHS | Compliant |
Datasheet
Sharp GP2S24BJ000F Datasheet
Download the complete datasheet for Sharp GP2S24BJ000F to view detailed technical specifications.
No datasheet is available for this part.