Quick Jump:
Technical Specifications
Silicon First International 2SD882O technical specifications.
General
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
40V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
30V
Maximum DC Collector Current
3A
Maximum Power Dissipation
10000mW
Material
Si
Minimum DC Current Gain
100@1A@2V
Maximum Transition Frequency
90(Typ)MHz
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
ECCN
EAR99
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Silicon First International 2SD882O Datasheet
Download the complete datasheet for Silicon First International 2SD882O to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.