Dual isolated gate driver IC with 5kV isolation, featuring 500mA high-level output current and 250mA low-level output current. Operates with a supply voltage range of 2.7V to 5.5V, including UVLO protection. Offers a propagation delay of 60ns and a fall time of 20ns, with a pulse width distortion of 5.6ns. Packaged in a 9.9mm x 6mm x 1.25mm SOIC, this AEC-Q100 qualified component is suitable for automotive applications.
Silicon Labs Si8237AD-B-IS technical specifications.
| Package/Case | SOIC |
| Fall Time | 20ns |
| Height | 1.25mm |
| High Level Output Current | 500mA |
| Length | 9.9mm |
| Low Level Output Current | 250mA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 500mA |
| Max Power Dissipation | 1.2W |
| Max Supply Voltage | 5.5V |
| Min Supply Voltage | 2.7V |
| Number of Channels | 2 |
| Number of Drivers | 2 |
| Number of Outputs | 2 |
| Operating Supply Current | 3.5mA |
| Output Current | 500mA |
| Package Quantity | 46 |
| Packaging | Rail/Tube |
| Propagation Delay | 60ns |
| Pulse Width Distortion (PWD) | 5.6ns |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q100 |
| Width | 6mm |
| RoHS | Compliant |
Download the complete datasheet for Silicon Labs Si8237AD-B-IS to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.