Dual-channel, non-inverting gate driver for MOSFETs, delivering 4A high-level output current and 2A low-level output current. Features a 60ns propagation delay and 12ns fall time, with a 5.6ns pulse width distortion. Operates from a 4.5V to 5.5V supply voltage, with a maximum power dissipation of 1.2W. This surface-mount component is housed in a 16-pin SOIC package and is RoHS compliant, suitable for automotive applications with AEC-Q100 qualification.
PackageSOIC
MountingSurface Mount
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Technical Specifications
Silicon Labs Si8238AB-C-IS1R technical specifications.
General
| Approvals | CSA, VDE, UR, CQC |
| Package/Case | SOIC |
| Fall Time | 12ns |
| High Level Output Current | 4A |
| Low Level Output Current | 2A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 4A |
| Max Power Dissipation | 1.2W |
| Max Supply Voltage | 5.5V |
| Min Supply Voltage | 4.5V |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Drivers | 2 |
| Number of Outputs | 2 |
| Operating Supply Current | 3.5mA |
| Output Current | 500mA |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Propagation Delay | 60ns |
| Pulse Width Distortion (PWD) | 5.6ns |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q100 |
Compliance
| RoHS | Compliant |
Datasheet
Silicon Labs Si8238AB-C-IS1R Datasheet
Download the complete datasheet for Silicon Labs Si8238AB-C-IS1R to view detailed technical specifications.
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