Dual isolated gate driver featuring 5kV isolation and 4A peak output current. This integrated circuit offers 2 channels with 2 drivers and 2 outputs, supporting a supply voltage range of 2.7V to 5.5V. Key performance metrics include a 12ns fall time and 60ns propagation delay, with a pulse width distortion of 5.6ns. Operating across a temperature range of -40°C to 125°C, this RoHS compliant component is housed in a SOIC package.
PackageSOIC
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Technical Specifications
Silicon Labs Si8238BD-C-IS technical specifications.
General
| Package/Case | SOIC |
| Fall Time | 12ns |
| Height | 1.25mm |
| High Level Output Current | 4A |
| Length | 9.9mm |
| Low Level Output Current | 2A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 4A |
| Max Power Dissipation | 1.2W |
| Max Supply Voltage | 5.5V |
| Min Supply Voltage | 2.7V |
| Number of Channels | 2 |
| Number of Drivers | 2 |
| Number of Outputs | 2 |
| Operating Supply Current | 3.5mA |
| Output Current | 500mA |
| Package Quantity | 46 |
| Packaging | Rail/Tube |
| Propagation Delay | 60ns |
| Pulse Width Distortion (PWD) | 5.6ns |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q100 |
| Width | 6mm |
Compliance
| RoHS | Compliant |
Datasheet
Silicon Labs Si8238BD-C-IS Datasheet
Download the complete datasheet for Silicon Labs Si8238BD-C-IS to view detailed technical specifications.
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