
The H5AN4G8NBJR-xxC,is a 4Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 4Gb DDR4 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.
SK Hynix H5AN4G8NBJR-XXC technical specifications.
| Configuration | 512M x 8 |
| Package | 78ball FBGA |
Download the complete datasheet for SK Hynix H5AN4G8NBJR-XXC to view detailed technical specifications.
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