General purpose rectifier diode, 1-phase, 1-element silicon device rated for 3A and a repetitive peak reverse voltage of 600V. Maximum operating temperature reaches 175°C.
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Technical Specifications
Solid State Devices 1N5552 technical specifications.
General
Max Operating Temperature
175
Number of Elements
1
Diode Element Material
SILICON
Diode Type
RECTIFIER DIODE
Rep Pk Reverse Voltage-Max
600
Compliance
REACH
Compliant
Military Spec
False
Datasheet
Solid State Devices 1N5552 Datasheet
Download the complete datasheet for Solid State Devices 1N5552 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.