General purpose rectifier diode, 1-phase, 1-element silicon device rated for 3A and a repetitive peak reverse voltage of 600V. Maximum operating temperature reaches 175°C.
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Technical Specifications
Solid State Devices 1N5552 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 600 |
Compliance
| REACH | Compliant |
| Military Spec | False |
Datasheet
Solid State Devices 1N5552 Datasheet
Download the complete datasheet for Solid State Devices 1N5552 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.