Sony
IMX290LQR-C
Diagonal 6.46 mm (Type 1/2.8) CMOS Solid-state Image Sensor with Square Pixel for Color Cameras
The IMX290LQR-C is a diagonal 6.46 mm (Type 1/2.8) CMOS active pixel type solid-state image sensor with a square pixel array and 2.13 M effective pixels. This chip operates with analog 2.9 V, digital 1.2 V, and interface 1.8 V triple power supply, and has low power consumption. High sensitivity, low dark current and no smear are achieved through the adoption of R, G and B primary color mosaic filters. This chip features an electronic shutter with variable charge-integration time. (Applications: Surveillance cameras, FA cameras, Industrial cameras)
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Technical Specifications
Sony IMX290LQR-C technical specifications.
General
Pixel Type
CMOS activedots
Image Sensor Type
CMOS
Image Sensor Size
Type 1/2.8
Integrated Circuits
Timing adjustment circuit, H/V driver, serial communication circuit
Input Frequency
74.25 / 37.125MHz
Recommended Recording Pixels
1920 (H) x 1080 (V) approx. 2.07Mpixels
Readout Mode
All-pixel scan, 720p-HD, Window cropping, Vertical/Horizontal normal/inverted
Max Frame Rate (Full HD 1080p)
120frame/s
Wide Dynamic Range (WDR)
Multiple exposure, Digital overlap
Shutter Function
Variable-speed (1H units resolution)
A/D Converter Resolution
10 / 12bit
Conversion Gain
HCG Mode / LCG Mode switching
Gain Control
CDS / PGA (0-30dB Analog, 30.3-72dB Analog+Digital)dB
I/O Switching Support
Yes
Output Type
CMOS logic parallel SDR
Output Type
LVDS serial (2/4/8ch) DDR, 150 mVp-p
Output Type
CSI-2 serial data (2/4 Lane, RAW10/RAW12)
Recommended Exit Pupil Distance
-30 mm to -∞
Color Filter Array
RGB primary color mosaic
Total Pixels
1945 (H) x 1109 (V) approx. 2.16 Mpixels
Effective Pixels
1945 (H) x 1097 (V) approx. 2.13 Mpixels
Active Pixels
1937 (H) x 1097 (V) approx. 2.12 Mpixels
Unit Cell Size
2.9 µm (H) × 2.9 µm (V)
Optical Black (H)
Front 0, Rear 0pixels
Optical Black (V)
Front 10, Rear 0pixels
Dummy (H)
Front 0, Rear 3pixels
Dummy (V)
Front 0, Rear 0pixels
Substrate Material
Silicon
Supply Voltage (Analog 2.9V) Max
3.3V
Supply Voltage (Analog 2.9V) Min
-0.3V
Supply Voltage (Interface 1.8V) Max
3.3V
Supply Voltage (Interface 1.8V) Min
-0.3V
Supply Voltage (Digital 1.2V) Max
2.0V
Supply Voltage (Digital 1.2V) Min
-0.3V
Input Voltage Max
OVDD + 0.3 (Not exceed 3.3)V
Input Voltage Min
-0.3V
Output Voltage Max
OVDD + 0.3 (Not exceed 3.3)V
Output Voltage Min
-0.3V
Supply Voltage (Analog 2.9V) Application Min
2.80V
Supply Voltage (Analog 2.9V) Application Typ
2.90V
Supply Voltage (Analog 2.9V) Application Max
3.00V
Supply Voltage (Interface 1.8V) Application Min
1.70V
Supply Voltage (Interface 1.8V) Application Typ
1.80V
Supply Voltage (Interface 1.8V) Application Max
1.90V
Supply Voltage (Digital 1.2V) Application Min
1.10V
Supply Voltage (Digital 1.2V) Application Typ
1.20V
Supply Voltage (Digital 1.2V) Application Max
1.30V
Performance Guarantee Temperature Min
-10°C
Performance Guarantee Temperature Max
60°C
Operating Guarantee Temperature Min
-30°C
Operating Guarantee Temperature Max
85°C
Storage Guarantee Temperature Min
-40°C
Storage Guarantee Temperature Max
85°C
Operating Current VDDH (LVDS 8ch, 12bit, 60fps, FHD)
54-111mA
Operating Current VDDM (LVDS 8ch, 12bit, 60fps, FHD)
16-29mA
Operating Current VDDL (LVDS 8ch, 12bit, 60fps, FHD)
77-123mA
Operating Current VDDH (MIPI CSI-2/4 Lane, 12bit, 60fps, FHD)
55-111mA
Operating Current VDDM (MIPI CSI-2/4 Lane, 12bit, 60fps, FHD)
1-2mA
Operating Current VDDL (MIPI CSI-2/4 Lane, 12bit, 60fps, FHD)
94-143mA
Operating Current VDDH (CMOS SDR, 12bit, 30fps, FHD)
55-111mA
Operating Current VDDM (CMOS SDR, 12bit, 30fps, FHD)
17-28mA
Operating Current VDDL (CMOS SDR, 12bit, 30fps, FHD)
49-90mA
Standby Current VDDH
0.1mA
Standby Current VDDM
0.1mA
Standby Current VDDL
14.0mA
INCK Clock Frequency
37.125 / 74.25MHz
INCK Low Level Pulse Width
4ns
INCK High Level Pulse Width
4ns
INCK Clock Duty
45-55%
INCK Rise Time
5ns
INCK Fall Time
5ns
XHS Low Level Pulse Width (Slave Mode)
4/fINCKns
XHS High Level Pulse Width (Slave Mode)
4/fINCKns
XVS-XHS Fall Width (Slave Mode)
1/fINCKns
XHS-XVS Rise Width (Slave Mode)
1/fINCKns
XVS Rise Time (Slave Mode)
5ns
XVS Fall Time (Slave Mode)
5ns
XHS Rise Time (Slave Mode)
5ns
XHS Fall Time (Slave Mode)
5ns
SCK Clock Frequency (4-wire)
13.5MHz
XCLR Low Level Pulse Width (4-wire)
4/fINCKns
XCE Effective Margin (4-wire)
20µs
XCE Input Setup Time (4-wire)
20ns
XCE Input Hold Time (4-wire)
20ns
XCE High Level Pulse Width (4-wire)
20ns
SDI Input Setup Time (4-wire)
10ns
SDI Input Hold Time (4-wire)
10ns
SDO Output Delay Time (4-wire)
0-25ns
XCLR Rise Time (4-wire)
5ns
XCLR Fall Time (4-wire)
5ns
XCE Rise Time (4-wire)
5ns
XCE Fall Time (4-wire)
5ns
SCK Rise Time (4-wire)
5ns
SCK Fall Time (4-wire)
5ns
SDI Rise Time (4-wire)
5ns
SDI Fall Time (4-wire)
5ns
SCL Clock Frequency (I2C)
400kHz
Hold Time (Start Condition) (I2C)
0.6µs
Low Period SCL Clock (I2C)
1.3µs
High Period SCL Clock (I2C)
0.6µs
Setup Time (Repeated Start Condition) (I2C)
0.6µs
Data Hold Time (I2C)
0-0.9µs
Data Setup Time (I2C)
100ns
Rise Time SDA/SCL (I2C)
300ns
Fall Time SDA/SCL (I2C)
300ns
Setup Time (Stop Condition) (I2C)
0.6µs
Bus Free Time (STOP to START) (I2C)
1.3µs
DLCKP Frequency (CMOS Output)
74.25MHz
DLCKP Clock Duty (CMOS Output)
40-60%
DLCKP-DLO Max Skew (CMOS Output)
2ns
DLCKP-DLO Min Skew (CMOS Output)
2ns
DLCKP/DLCKM Clock Duty (LVDS DDR)
40-60%
DLO Setup Time (LVDS DDR)
400ps
DLO Hold Time (LVDS DDR)
400ps
Spectral Sensitivity
Graph on page 23
G Sensitivity (HCG)
4663Digit (mV)
G Sensitivity (LCG)
2332Digit (mV)
Sensitivity Ratio (R/G RG)
0.45-0.60
Sensitivity Ratio (B/G BG)
0.32-0.47
Saturation Signal (LCG)
3857Digit (mV)
Video Signal Shading
25%
Vertical Line
90µV
Dark Signal
0.63Digit (mV)
Dark Signal Shading
0.63Digit (mV)
Conversion Efficiency
1.8-2.2
Compliance
Trademark
Exmor R
Trademark
STARVIS
Datasheet
Sony IMX290LQR-C Datasheet
Download the complete datasheet for Sony IMX290LQR-C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.