Silicon NPN phototransistor chip, 880nm peak wavelength, featuring a 2-pin T-1 package with a 3 mm diameter and 3.8 mm diameter. This through-hole mounted component offers a 120° half-intensity angle and a top-viewing orientation. Key electrical specifications include a maximum collector current of 30 mA, maximum emitter-collector voltage of 5 V, and maximum collector-emitter voltage of 30 V. Operating temperature range is -30°C to 85°C, with a maximum power dissipation of 75 mW.
PackageT-1
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stanley PS3G01X technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
T-1
Package/Case
T-1
Package Description
3 mm Package
Lead Shape
Through Hole
Pin Count
2
PCB
2
Package Height (mm)
4.5
Pin Pitch (mm)
2.5
Package Diameter (mm)
3.8
Mounting
Through Hole
Phototransistor Type
Phototransistor
Type
Chip
Polarity
NPN
Half Intensity Angle Degrees
120°
Min Operating Temperature
-30°C
Max Operating Temperature
85°C
Viewing Orientation
Top View
Peak Wavelength
880nm
Maximum Light Current
3600uA
Lens Shape Type
Domed
Number of Channels per Chip
1
Fabrication Technology
NPN Transistor
Lens Color
Water Clear
Maximum Emitter-Collector Voltage
5V
Maximum Collector-Emitter Voltage
30V
Maximum Dark Current
200nA
Maximum Collector Current
30mA
Maximum Collector-Emitter Saturation Voltage
0.1V
Maximum Fall Time
5000ns
Maximum Power Dissipation
75mW
Maximum Rise Time
5000ns
Compliance
Cage Code
S4238
EU RoHS
Yes
HTS Code
8541407080
Schedule B
8541407080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Stanley PS3G01X Datasheet
Download the complete datasheet for Stanley PS3G01X to view detailed technical specifications.
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