PackageTO-262
MountingThrough Hole
PolarityN-CHANNEL
Power125W
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Technical Specifications
Stmicroelectronics STI11NM65N technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 380mR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 55ns |
| Turn-On Delay Time | 11ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STI11NM65N Datasheet
Download the complete datasheet for Stmicroelectronics STI11NM65N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.