The VNW100N04-E is a N-CHANNEL power MOSFET with a drain to source breakdown voltage of 42V and a continuous drain current of 100A. It has a drain to source resistance of 12 milliohms and a maximum power dissipation of 208W. The device is packaged in a TO-247 case and is mounted through a hole. It is available in a quantity of 30 per rail or tube packaging.
PackageTO-247
MountingThrough Hole
PolarityN-CHANNEL
Power208W
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Technical Specifications
Stmicroelectronics VNW100N04-E technical specifications.
General
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 42V |
| Drain to Source Resistance | 12mR |
| Max Power Dissipation | 208W |
| Mount | Through Hole |
| Number of Outputs | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 208W |
| Radiation Hardening | No |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics VNW100N04-E Datasheet
Download the complete datasheet for Stmicroelectronics VNW100N04-E to view detailed technical specifications.
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