Sumitomo
EGNC210MK
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Nitride, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL-CERAMIC PACKAGE-2
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Nitride, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL-CERAMIC PACKAGE-2
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Technical Specifications
Sumitomo EGNC210MK technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| Pin Count | 2 |
| Number of Elements | 1 |
Compliance
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Sumitomo EGNC210MK Datasheet
Download the complete datasheet for Sumitomo EGNC210MK to view detailed technical specifications.
No datasheet is available for this part.