Sumitomo
FLL200IB-1
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 2 PIN
Quick Jump:
Technical Specifications
Sumitomo FLL200IB-1 technical specifications.
General
Number of Terminals
2
Terminal Position
DUAL
Pin Count
2
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
Lead Free
Yes
REACH
unknown
Military Spec
False
Datasheet
Sumitomo FLL200IB-1 Datasheet
Download the complete datasheet for Sumitomo FLL200IB-1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.