FLM0910-4F

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IA, 2 PIN

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Sumitomo FLM0910-4F technical specifications.

Number of Terminals

Terminal Position

DUAL

Pin Count

Number of Elements

RoHS

Yes

Eccn Code

EAR99

Lead Free

Yes

REACH

unknown

Military Spec

False

This datasheet cannot be embedded due to technical restrictions.