N-channel JFET for small signal applications. Features a 350V breakdown voltage and a continuous drain current of 0.072A. This silicon transistor utilizes a metal-oxide semiconductor field-effect transistor (MOSFET) structure within a single element. Packaged in a TO-236AB (SOT-23) configuration with three terminals, it operates up to a maximum temperature of 150°C.
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Technical Specifications
Supertex DN3135K1-G technical specifications.
General
Max Operating Temperature
150
Number of Terminals
3
Terminal Position
DUAL
JEDEC Package Code
TO-236AB
Pin Count
3
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
Lead Free
Yes
HTS Code
8541.21.00.95
REACH
Compliant
Military Spec
False
Datasheet
Supertex DN3135K1-G Datasheet
Download the complete datasheet for Supertex DN3135K1-G to view detailed technical specifications.
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