P-channel silicon Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed for power applications. Features a continuous drain current (I(D)) of 0.125A and a drain-source voltage (V(DS)) of 400V. Offers a low on-resistance of 30 ohms. Encased in a TO-243AA package with 3 terminals, suitable for operation up to a maximum temperature of 150°C.
Supertex TP2540N8-G technical specifications.
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