P-channel silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for power applications. Features a continuous drain current (I(D)) of 0.16A and a drain-source voltage rating of 500V. Offers a low on-resistance of 30 ohms. This single-element transistor is housed in a TO-243AA package with 3 terminals.
Supertex VP2450N8-G technical specifications.
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