Small-signal fast switching diode in SOD-323F (SC-90) package with 75V VRRM, 100V VRSM, 150mA average forward current, and 4ns reverse recovery. Low capacitance and low leakage make it suitable for high-speed switching and general-purpose signal applications. Features MSL 1, matte tin over Ni terminals (JESD-609 e3), and halogen‑free green compound option (suffix G)
PolarityCathode band indicated
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Technical Specifications
Taiwan Semiconductor 1N4148WS technical specifications.
General
| Device type | Fast switching diode (small signal) |
| Configuration | Single |
| Repetitive peak reverse voltage (VRRM) | 75V |
| Non‑repetitive peak reverse voltage (VRSM) | 100V |
| Average forward current (IO) | 150mA |
| Repetitive peak forward current (IFRM) | 300mA |
| Power dissipation (PD) | 200mW |
| Reverse recovery time (trr) | 4ns |
| Junction capacitance (Cj) @ 0V, 1MHz | 4pF |
| Forward voltage (VF) @ IF=100mA | 1.0 maxV |
| Reverse leakage current (IR) @ VR=20V | 25 maxnA |
| Reverse leakage current (IR) @ VR=75V | 5 maxµA |
| Thermal resistance, junction-to-ambient (RθJA) | 500°C/W |
| Junction & storage temperature (TJ, TSTG) | -65 to +150°C |
| MSL rating | Level 1 (J-STD-020) |
| Terminal finish | Matte Tin (Sn) over Nickel (Ni), JESD-609 e3 |
| Polarity | Cathode band indicated |
| Package dimensions (L × W × H) | 2.30–2.70 × 1.60–1.80 × 0.80–1.00mm |
| Case style | SOD‑323F; JESD-30 R‑PDSO‑F2 |
| Reverse recovery test conditions | IF=10mA, IR=60mA, RL=100Ω, IRR=1mA |
| Weight | 4.85 ±0.5mg |
Compliance
| RoHS | Compliant |
Datasheet
Taiwan Semiconductor 1N4148WS Datasheet
Download the complete datasheet for Taiwan Semiconductor 1N4148WS to view detailed technical specifications.
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