The 1N5408GA0G is a silicon rectifier diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -55 degrees Celsius. It has a JEDEC package code of DO-201AD and a terminal position of axial. The diode is a single element with a maximum reverse voltage of 1000 volts. It is manufactured by Taiwan Semiconductor and is a general purpose rectifier diode.
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Technical Specifications
Taiwan Semiconductor 1N5408GA0G technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-201AD |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 1000 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.80 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Taiwan Semiconductor 1N5408GA0G Datasheet
Download the complete datasheet for Taiwan Semiconductor 1N5408GA0G to view detailed technical specifications.
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