Taiwan Semiconductor
1N5820R0
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
PackageDO-201AD
MountingThrough Hole
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Technical Specifications
Taiwan Semiconductor 1N5820R0 technical specifications.
General
| Package/Case | DO-201AD |
| Forward Current | 3A |
| Height | 5.6mm |
| Length | 9.5mm |
| Max Forward Surge Current (Ifsm) | 70A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -65°C |
| Max Repetitive Reverse Voltage (Vrrm) | 20V |
| Max Reverse Current | 500uA |
| Mount | Through Hole |
| Packaging | Tape and Reel |
| Peak Non-Repetitive Surge Current | 70A |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Width | 5.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Taiwan Semiconductor 1N5820R0 Datasheet
Download the complete datasheet for Taiwan Semiconductor 1N5820R0 to view detailed technical specifications.
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