The BZT52B30S RR is a single zener diode with a nominal voltage of 30V and a tolerance of 2%. It has a maximum zener impedance of 80 and a maximum power dissipation of 200mW. The diode is packaged in a small outline diode package (SOD-323F) with a lead-frame SMT construction. It can operate over a temperature range of -65°C to 150°C and has a maximum reverse leakage current of 0.045mA.
PackageSOD-323F
MountingSurface Mount
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Technical Specifications
Taiwan Semiconductor BZT52B30S RR technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOD |
| Package/Case | SOD-323F |
| Package Description | Small Outline Diode Package |
| Pin Count | 2 |
| PCB | 2 |
| Package Length (mm) | 1.8(Max) |
| Package Width (mm) | 1.35(Max) |
| Package Height (mm) | 1.1(Max) |
| Seated Plane Height (mm) | 1.1(Max) |
| Mounting | Surface Mount |
| Type | Voltage Regulator |
| Configuration | Single |
| Nominal Zener Voltage | 30V |
| Maximum Zener Impedance | 80Ohm |
| Zener Voltage Tolerance | 2% |
| Maximum Power Dissipation | 200mW |
| Maximum Reverse Leakage Current | 0.045uA |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SDM41 |
| EU RoHS | Yes |
| HTS Code | 8541100050 |
| Schedule B | 8541100050 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Taiwan Semiconductor BZT52B30S RR Datasheet
Download the complete datasheet for Taiwan Semiconductor BZT52B30S RR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.