Taiwan Semiconductor
BZW06-273B
Trans Voltage Suppressor Diode, 600W, 273V V(RWM), Bidirectional, 1 Element, Silicon, DO-15, GREEN, PLASTIC PACKAGE-2
PackageDO-15
PolarityBidirectional
Power200mW
Quick Jump:
Technical Specifications
Taiwan Semiconductor BZW06-273B technical specifications.
General
| Package/Case | DO-15 |
| Clamping Voltage | 564V |
| Max Breakdown Voltage | 336V |
| Min Breakdown Voltage | 304V |
| Max Forward Surge Current (Ifsm) | 2.5A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Repetitive Reverse Voltage (Vrrm) | 250V |
| Max Reverse Leakage Current | 1uA |
| Max Surge Current | 7.1A |
| Operating Supply Voltage | 273V |
| Package Quantity | 3500 |
| Packaging | Tape and Reel |
| Peak Pulse Current | 1.6A |
| Peak Pulse Power | 600W |
| Polarity | Bidirectional |
| Power Dissipation | 200mW |
| Reverse Recovery Time | 50ns |
| Reverse Standoff Voltage | 273V |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Taiwan Semiconductor BZW06-273B Datasheet
Download the complete datasheet for Taiwan Semiconductor BZW06-273B to view detailed technical specifications.
No datasheet is available for this part.