Taiwan Semiconductor
BZX79B18
Zener Diode, 18V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-35, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
PackageDO-35
Power500mW
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Technical Specifications
Taiwan Semiconductor BZX79B18 technical specifications.
General
| Package/Case | DO-35 |
| Clamping Voltage | 70.1V |
| Impedance | 45R |
| Max Breakdown Voltage | 53.6V |
| Min Breakdown Voltage | 48.5V |
| Max Forward Surge Current (Ifsm) | 2.5A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Repetitive Reverse Voltage (Vrrm) | 250V |
| Max Reverse Leakage Current | 50nA |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Peak Pulse Current | 21.4A |
| Peak Pulse Power | 1.5kW |
| Power Dissipation | 500mW |
| Reverse Recovery Time | 50ns |
| Reverse Standoff Voltage | 43.6V |
| RoHS Compliant | Yes |
| Voltage Tolerance | 2% |
| Zener Voltage | 18V |
Compliance
| RoHS | Compliant |
Datasheet
Taiwan Semiconductor BZX79B18 Datasheet
Download the complete datasheet for Taiwan Semiconductor BZX79B18 to view detailed technical specifications.
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