Taiwan Semiconductor
DB105G
Bridge Rectifier Diode, 1 Phase, 1A, 600V V(RRM), Silicon, PLASTIC, DB, 4 PIN
PackageDIP
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Technical Specifications
Taiwan Semiconductor DB105G technical specifications.
General
| Package/Case | DIP |
| Forward Current | 1A |
| Height | 3.3mm |
| Length | 8.51mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Repetitive Reverse Voltage (Vrrm) | 600V |
| Max Reverse Leakage Current | 10uA |
| Max Surge Current | 50A |
| Output Current | 1A |
| Package Quantity | 2500 |
| Packaging | Rail/Tube |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Width | 6.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Taiwan Semiconductor DB105G Datasheet
Download the complete datasheet for Taiwan Semiconductor DB105G to view detailed technical specifications.
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