25A, 1kV silicon bridge rectifier diode designed for through-hole mounting. Features a maximum forward surge current of 300A and a maximum reverse leakage current of 5uA. Operates within a temperature range of -50°C to 150°C, with a capacitance of 180pF. Packaged in bulk for high-volume applications.
Capacitance180pF
Current Rating25A
MountingThrough Hole
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Technical Specifications
Taiwan Semiconductor GBPC2510W technical specifications.
General
Capacitance
180pF
Current Rating
25A
Forward Current
25A
Height
11.23mm
Lead Free
Lead Free
Length
29mm
Max Forward Surge Current (Ifsm)
300A
Max Operating Temperature
150°C
Min Operating Temperature
-50°C
Max Repetitive Reverse Voltage (Vrrm)
1kV
Max Reverse Current
5uA
Max Reverse Leakage Current
5uA
Max Surge Current
300A
Mount
Through Hole
Output Current
25A
Package Quantity
100
Packaging
Bulk
DC Rated Voltage
1kV
Width
29mm
Compliance
RoHS
Compliant
Datasheet
Taiwan Semiconductor GBPC2510W Datasheet
Download the complete datasheet for Taiwan Semiconductor GBPC2510W to view detailed technical specifications.
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