The GBU801D2G is a 4-element bridge rectifier diode from Taiwan Semiconductor. It features a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -55 degrees Celsius. The diode element material is SILICON and the diode type is a bridge rectifier diode. The device has a maximum reverse voltage of 50V and a minimum breakdown voltage of 50V. It is packaged in a R-PSFM-T4 package type.
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Technical Specifications
Taiwan Semiconductor GBU801D2G technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 4 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 50 |
| Breakdown Voltage-Min | 50 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Taiwan Semiconductor GBU801D2G Datasheet
Download the complete datasheet for Taiwan Semiconductor GBU801D2G to view detailed technical specifications.
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