Taiwan Semiconductor
HER308GR0
Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-201AD,
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Technical Specifications
Taiwan Semiconductor HER308GR0 technical specifications.
General
| Forward Current | 3A |
| Max Forward Surge Current (Ifsm) | 125A |
| Max Operating Temperature | 150°C |
| Max Repetitive Reverse Voltage (Vrrm) | 1kV |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Taiwan Semiconductor HER308GR0 Datasheet
Download the complete datasheet for Taiwan Semiconductor HER308GR0 to view detailed technical specifications.
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