Taiwan Semiconductor
HERAF808G
Rectifier Diode, 1 Phase, 1 Element, 8A, 1000V V(RRM), Silicon, TO-220AC, GREEN, PLASTIC, ITO-220AC, 2 PIN
Quick Jump:
Technical Specifications
Taiwan Semiconductor HERAF808G technical specifications.
General
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Reverse Current | 10uA |
| Max Surge Current | 150A |
| Package Quantity | 2000 |
| Packaging | Rail/Tube |
| Reverse Voltage | 1kV |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Taiwan Semiconductor HERAF808G Datasheet
Download the complete datasheet for Taiwan Semiconductor HERAF808G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.