Taiwan Semiconductor
KBU803G
Bridge Rectifier Diode, 1 Phase, 8A, 200V V(RRM), Silicon, GREEN, PLASTIC, KBU, 4 PIN
MountingThrough Hole
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Technical Specifications
Taiwan Semiconductor KBU803G technical specifications.
General
| Forward Current | 8A |
| Height | 19.3mm |
| Length | 23.7mm |
| Max Forward Surge Current (Ifsm) | 200A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Repetitive Reverse Voltage (Vrrm) | 200V |
| Max Reverse Current | 5uA |
| Max Reverse Leakage Current | 5uA |
| Max Surge Current | 200A |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Bulk |
| RoHS Compliant | Yes |
| Width | 7.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Taiwan Semiconductor KBU803G Datasheet
Download the complete datasheet for Taiwan Semiconductor KBU803G to view detailed technical specifications.
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