Taiwan Semiconductor
MBR6035PT
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 35V V(RRM), Silicon, TO-247AD, GREEN, PLASTIC, TO-3P, 3 PIN
MountingThrough Hole
Power400mW
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Technical Specifications
Taiwan Semiconductor MBR6035PT technical specifications.
General
| Forward Current | 60A |
| Height | 21.3mm |
| Length | 16.4mm |
| Max Forward Surge Current (Ifsm) | 420A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Repetitive Reverse Voltage (Vrrm) | 35V |
| Max Reverse Current | 1mA |
| Max Reverse Leakage Current | 1mA |
| Max Surge Current | 420A |
| Mount | Through Hole |
| Package Quantity | 900 |
| Packaging | Rail/Tube |
| Power Dissipation | 400mW |
| Reverse Recovery Time | 25ns |
| RoHS Compliant | Yes |
| Width | 5.16mm |
Compliance
| RoHS | Compliant |
Datasheet
Taiwan Semiconductor MBR6035PT Datasheet
Download the complete datasheet for Taiwan Semiconductor MBR6035PT to view detailed technical specifications.
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