Schottky diode, dual common cathode configuration, rated for 200V peak reverse repetitive voltage and 30A maximum continuous forward current. Features a 1.05V peak forward voltage and 200A peak non-repetitive surge current. Housed in an ITO-220AB plastic package with 3 pins and a tab, designed for through-hole mounting. Operating temperature range from -55°C to 150°C.
Taiwan Semiconductor MBRF30200CTD0G technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | ITO-220AB |
| Package Description | Transistor Outline Package |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.3(Max) |
| Package Width (mm) | 4.7(Max) |
| Package Height (mm) | 15.5(Max) |
| Seated Plane Height (mm) | 19.6(Max) |
| Pin Pitch (mm) | 2.7(Max) |
| Package Weight (g) | 1.7 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | Schottky Diode |
| Configuration | Dual Common Cathode |
| Peak Reverse Repetitive Voltage | 200V |
| Maximum Continuous Forward Current | 30A |
| Peak Non-Repetitive Surge Current | 200A |
| Peak Forward Voltage | 1.05V |
| Peak Reverse Current | 200uA |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Operating Junction Temperature | -55 to 150°C |
| Cage Code | SDM41 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541100080 |
| Schedule B | 8541100080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Taiwan Semiconductor MBRF30200CTD0G to view detailed technical specifications.
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