Single-phase bridge rectifier diode featuring a 25A current rating and 600V repetitive peak reverse voltage. Constructed with silicon for reliable performance, this component operates within a temperature range of -55°C to 150°C. It exhibits a maximum reverse leakage current of 10µA and a maximum surge current capability of 300A. The device is housed in a SIL plastic package with dimensions of 30.3mm (L) x 4.8mm (W) x 20.3mm (H) and is supplied in rail/tube packaging, with 1200 units per package. This RoHS compliant component is suitable for various power rectification applications.
PackageSIL
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Technical Specifications
Taiwan Semiconductor TS25P05G technical specifications.
General
| Package/Case | SIL |
| Height | 20.3mm |
| Length | 30.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Reverse Leakage Current | 10uA |
| Max Surge Current | 300A |
| Package Quantity | 1200 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Width | 4.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Taiwan Semiconductor TS25P05G Datasheet
Download the complete datasheet for Taiwan Semiconductor TS25P05G to view detailed technical specifications.
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