Dual-channel operational amplifier IC in PDIP package. Features a 1MHz gain bandwidth product and 100dB voltage gain. Operates with a supply voltage range of 1.5V to 16V, with a maximum dual supply voltage of 16V. Offers a 5mV input offset voltage and 250nA input bias current. Maximum operating temperature is 85°C.
Taiwan Semiconductor TS358CD technical specifications.
| Package/Case | PDIP |
| Clamping Voltage | 70.1V |
| Collector Base Voltage (VCBO) | -40V |
| Collector Emitter Saturation Voltage | -400mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Continuous Collector Current | -200mA |
| Drain to Source Voltage (Vdss) | -60V |
| Emitter Base Voltage (VEBO) | 40V |
| Gain Bandwidth Product | 1MHz |
| Gate to Source Voltage (Vgs) | -1.5V |
| hFE Min | 100 |
| Input Bias Current | 250nA |
| Input Capacitance | 436pF |
| Input Offset Voltage (Vos) | 5mV |
| Max Breakdown Voltage | 9.8V |
| Min Breakdown Voltage | 25.4V |
| Max Dual Supply Voltage | 16V |
| Min Dual Supply Voltage | 1.5V |
| Max Forward Surge Current (Ifsm) | 2.5A |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -20°C |
| Max Repetitive Reverse Voltage (Vrrm) | 250V |
| Max Reverse Leakage Current | 1uA |
| Number of Channels | 2 |
| Operating Supply Voltage | 16V |
| Output Current | 40mA |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Peak Pulse Current | 21.4A |
| Peak Pulse Power | 1.5kW |
| Power Dissipation | 150mW |
| Reverse Recovery Time | 50ns |
| Reverse Standoff Voltage | 24V |
| Supply Current | 1.2mA |
| Voltage Gain | 100dB |
| Zener Voltage | 75V |
| RoHS | Not Compliant |
Download the complete datasheet for Taiwan Semiconductor TS358CD to view detailed technical specifications.
No datasheet is available for this part.