PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 20V collector-emitter voltage and 5A continuous collector current. This single-element transistor is housed in a SOT-89 (TO-243AA) plastic package with a 4-pin configuration and a tab. Maximum power dissipation is 1000mW, with a minimum DC current gain of 82 at 0.5A and 2V. Operating temperature range is -55°C to 150°C.
PackageSOT-89
MountingSurface Mount
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Technical Specifications
Taiwan Semiconductor TSB1386CPP technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT-89
Package/Case
SOT-89
Package Description
Small Outline Transistor
Lead Shape
Flat
Pin Count
4
PCB
3
Tab
Tab
Package Length (mm)
4.6(Max)
Package Width (mm)
2.6(Max)
Package Height (mm)
1.6(Max)
Seated Plane Height (mm)
1.6(Max)
Pin Pitch (mm)
1.5(Max)
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-243AA
Type
PNP
Configuration
Single Dual Collector
Number of Elements per Chip
1
Maximum Collector Base Voltage
30V
Maximum Emitter Base Voltage
6V
Maximum Collector-Emitter Voltage
20V
Maximum DC Collector Current
5A
Maximum Power Dissipation
1000mW
Minimum DC Current Gain
Maximum Transition Frequency
120(Typ)MHz
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SDM41
EU RoHS
Yes
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Taiwan Semiconductor TSB1386CPP Datasheet
Download the complete datasheet for Taiwan Semiconductor TSB1386CPP to view detailed technical specifications.
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