NPN Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 700V collector-emitter voltage and 1A maximum DC collector current. Offers 10000mW maximum power dissipation and a 1500V maximum collector-base voltage. Operates across a -55°C to 150°C temperature range. Packaged in a 3-pin TO-92 plastic header style with formed leads.
PackageTO-92
MountingThrough Hole
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Technical Specifications
Taiwan Semiconductor TSC5401CT A3G technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-92
Package/Case
TO-92
Package Description
Plastic Header Style Package
Lead Shape
Formed
Pin Count
3
PCB
3
Package Length (mm)
4.7(Max)
Package Width (mm)
3.7(Max)
Package Height (mm)
4.7(Max)
Package Material
Plastic
Mounting
Through Hole
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
1500V
Maximum Emitter Base Voltage
7V
Maximum Collector-Emitter Voltage
700V
Maximum DC Collector Current
1A
Maximum Power Dissipation
10000mW
Minimum DC Current Gain
20@10mA@5V|5@500mA@5V|2@1A@5V
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SDM41
EU RoHS
Yes
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Taiwan Semiconductor TSC5401CT A3G Datasheet
Download the complete datasheet for Taiwan Semiconductor TSC5401CT A3G to view detailed technical specifications.
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