NPN bipolar junction transistor (BJT) for through-hole mounting. Features a 400V collector-emitter voltage and 1A continuous collector current. Housed in a 3-pin TO-92 plastic package with formed leads. Offers a maximum power dissipation of 1000mW and a minimum DC current gain of 80. Operates across a temperature range of -55°C to 150°C.
PackageTO-92
MountingThrough Hole
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Technical Specifications
Taiwan Semiconductor TSC873CT A3 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-92
Package/Case
TO-92
Package Description
Plastic Header Style Package
Lead Shape
Formed
Pin Count
3
PCB
3
Package Length (mm)
4.7(Max)
Package Width (mm)
3.7(Max)
Package Height (mm)
4.7(Max)
Seated Plane Height (mm)
4.7(Max)
Package Material
Plastic
Mounting
Through Hole
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
600V
Maximum Emitter Base Voltage
9V
Maximum Collector-Emitter Voltage
400V
Maximum DC Collector Current
1A
Maximum Power Dissipation
1000mW
Material
Si
Minimum DC Current Gain
80@250mA@10V
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SDM41
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Datasheet
Taiwan Semiconductor TSC873CT A3 Datasheet
Download the complete datasheet for Taiwan Semiconductor TSC873CT A3 to view detailed technical specifications.
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